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RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

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RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

Brand Name : ROHM

Model Number : RGS80TSX2DHRC11

Certification : RoHS

Place of Origin : Japan

MOQ : 30 PCS

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T

Supply Ability : 6K PCS

Delivery Time : 2-3 DAYS

Packaging Details : 30 PCS/Tube

Category : Single IGBTs

Mfr : Rohm Semiconductor

Package : Tube

IGBT Type : Trench Field Stop

Voltage - Collector Emitter Breakdown (Max) : 1200 V

Current - Collector (Ic) (Max) : 80 A

Current - Collector Pulsed (Icm) : 120 A

Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 40A

Power - Max : 555 W

Input Type : Standard

Gate Charge : 104 nC

Test Condition : 600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr) : 198 ns

Operating Temperature : -40°C ~ 175°C

Mounting Type : Through Hole

Supplier Device Package : TO-247N

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RGS80TSX2DHRC11 IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N

Features:

●Low Collector - Emitter Saturation Voltage

●Short Circuit Withstand Time 10μs

●Qualified to AEC-Q101

●Built in Very Fast & Soft Recovery FRD

●Pb - free Lead Plating ; RoHS Compliant

Description:

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that

are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes

to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and

thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with

reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current

applications.

Quick Detail:

Manufacturer
Rohm Semiconductor
Manufacturer Product Number
RGS80TSX2DHRC11
Description
IGBT TRENCH FLD 1200V 80A TO247N
Detailed Description
IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N

Product Attributes:

TYPE
DESCRIPTION
Category
Single IGBTs
Mfr
Rohm Semiconductor
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Power - Max
555 W
Switching Energy
3mJ (on), 3.1mJ (off)
Input Type
Standard
Gate Charge
104 nC
Td (on/off) @ 25°C
49ns/199ns
Test Condition
600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
198 ns
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247N
Base Product Number
RGS80

Additional Resources:

ATTRIBUTE DESCRIPTION
Other Names 846-RGS80TSX2DHRC11
Standard Package 30

Data Picture:https://fscdn.rohm.com/en/products/databook/datasheet/discrete/igbt/rgs80tsx2dhr-e.pdf

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W


Product Tags:

RGS80TSX2DHRC11

      

IGBT Trench Field Stop

      

to-247n rohm

      
China RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W factory

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W Images

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